symbol v ds v gs i dm i ar e ar t j , t stg symbol ty p max 20 24 45 55 r jc 2.5 3.0 avalanche current h 30 a repetitive avalanche energy l=0.3mh h 135 mj 18 continuous drain current a t a =25c i dsm 23 maximum junction-to-case d steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current c power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state 70 50 120 power dissipation a t a =25c p dsm 5 t a =70c continuous drain current b maximum units parameter t c =25c t c =100c 30 junction and storage temperature range a p d c 50 25 -55 to 175 t c =100c i d a w t a =70c 3 w AOL1424 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 70a (v gs = 10v) r ds(on) < 5.4m ? (v gs = 10v) r ds(on) < 8m ? (v gs = 4.5v) esd protected uis tested! rg, ciss,coss,crss tested general description the AOL1424 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 4.5v,while retaining a 20v v gs(max) rating. it is esd protected.this device is suitable for use as a load switch. standard product AOL1424 is pb-free (meets rohs & sony 259 specifications). ultra so-8 tm top view bottom tab connected to drain fits soic8 footprint ! s g d d s g alpha & omega semiconductor, ltd. www.aosmd.com
AOL1424 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 10 ? ? q g (10v) 36 48 nc q g (4.5v) 19 nc q gs 3.9 nc q gd 8.7 nc t d(on) 7.6 ns t r 6.4 ns t d(off) 27 ns t f 8.5 ns t rr 27 33 ns q rr 17 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =30v, v gs =0v v ds =0v, v gs = 16v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m ? v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =20a a: the value of r ja is measured with the device in a still air environment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150c, using t 10s junction-to-ambient thermal resistance. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. h. ear and iar ratings are based on low frequency and duty cycles such that tj(start)=25c for each pulse. rev3: july 2007 alpha & omega semiconductor, ltd. www.aosmd.com
AOL1424 typical electrical and thermal characteristic s 0 30 60 90 120 012345 v ds (volts) figure 1: on-region characteristics i d (a) 10v 4.5v v gs =3.5v 6v 3v 4v 5v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) -40c 2 4 6 8 10 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125 c -40c 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -30 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =20a v gs =4.5v i d =20a 0 5 10 15 2345678910 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AOL1424 typical electrical and thermal characteristic s 0 2 4 6 8 10 0 10203040 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 jc .r jc r jc =3c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOL1424 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0 20 40 60 80 0 25 50 75 100 125 150 175 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r alpha & omega semiconductor, ltd. www.aosmd.com
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